onsemi FDP61N20

Name: onsemi FDP61N20
Brand: onsemi
SKU: FDP61N20

N-Channel Power MOSFET, UniFETTM, 200V, 61A, 41mΩ, TO-220

$ 1.245

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Distributor		SKU		Min
Avnet		FDP61N20	460	50			1.274	1.202	1.202	2d
Newark	2	FDP61N20	2,455	1	4.020	2.280	2.020	1.810	1.800
Verical	6	FDP61N20	500	50			1.307	1.222	1.222
Arrow Electronics	2	FDP61N20	1,672	1	1.341	1.283	1.283	1.283	1.283
Master Electronics		FDP61N20	600	50			1.150	1.070	1.020

Inventory History

3 month trend: -15.38%

CAD Models

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Alternate Parts

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Datasheets & Documents

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Upverter

Technical Drawing1 page6 years ago

IHS

Fairchild Semiconductor

onsemi

element14 APAC

Inventory History

3 month trend:

-15.38%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-09-28

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDP61N20 provided by its distributors.

N-Channel Power MOSFET, UniFETTM, 200V, 61A, 41mΩ, TO-220

onsemi

Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220; UniFET™

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MOSFET N-CH 200V 61A TO-220 / Trans MOSFET N-CH 200V 61A 3-Pin(3+Tab) TO-220 Tube

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N-Channel 200 V 41 mO 417 W Flange Mount Mosfet - TO-220

Future Electronics

Power Field-Effect Transistor, 61A I(D), 200V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:TO-220; Power Dissipation Pd:417W; Power Dissipation Pd:417W; Pulse Current Idm:244A; Repetitive Avalanche Energy Max:41.7mJ; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor