onsemi FDMS8460
$ 0.856
Production
Inventory History
3 month trend: -30.09%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-02-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi FDMS8460 provided by its distributors.
N-Channel Power Trench® MOSFET 40V, 49A, 2.2mΩ
2.5W(Ta)，104W(Tc) 20V 3V@ 250µA 110nC@ 10 V 1individualNChannel 40V 2.2mΩ@ 25A,10V 25A，49A 7.205nF@20V PQFN SMD mount 1.1mm(height)
MOSFET,N CH,40V,25A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power D
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -30.09%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.205 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max2.2 mΩ
Resistance2.2 MΩ
Rise Time9 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time48 ns
Turn-On Delay Time19 ns
Voltage40 V
Dimensions
Height1.1 mm
Length5 mm
Width6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements