40 V, 18 A, 4.3 MILLI OHM N-CHANNEL POWER TRENCH MOSFET Small Signal Field-Effect Transistor, 18A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 40V, 18A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)