Infineon IRF7842TRPBF

Name: Infineon IRF7842TRPBF
Brand: Infineon
SKU: IRF7842TRPBF

Trans Mosfet N-ch 40V 18A 8-PIN SOIC N T/r / Mosfet N-ch 40V 18A 8-SOIC

$ 0.64

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	42Y0423	1,916	1		1.910	1.220	0.811	0.811	0.811	18h
Newark	2	IRF7842TRPBF	4,863	1	Cut Tape	0.577	0.577	0.577	0.577	0.577
Future Electronics	2	IRF7842TRPBF	8,000	4K	Tape & Reel					0.470
Rutronik		TMOSP12005	4,000	4K						0.581	23h
Arrow Electronics	3	IRF7842TRPBF	3,990	1		1.447	0.934	0.718	0.531	0.531

Inventory History

3 month trend: +8.02%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7842TRPBF.

IHS

Datasheet11 pages11 years ago

Datasheet10 pages11 years ago

TME

element14 APAC

iiiC

Inventory History

3 month trend:

+8.02%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF7842TRPBF

onsemiFDS8840NZ

Price @ 1000

$ 0.64

$ 0.784

Stock

1,299,541

275,367

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

18 A

18.6 A

Threshold Voltage

2.25 V

Rds On Max

5 mΩ

4.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

1 W

Input Capacitance

4.5 nF

7.535 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-09-21

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7842TRPBF provided by its distributors.

Trans MOSFET N-CH 40V 18A 8-Pin SOIC N T/R / MOSFET N-CH 40V 18A 8-SOIC

Win Source

Single N-Channel 40 V 2.5 W 50 nC Silicon Surface Mount Mosfet - SOIC-8

Future Electronics

Power MOSFET, N Channel, 40 V, 18 A, 0.004 ohm, SOIC, Surface Mount

Avnet

Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

Infineon

MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:2.5W

element14 APAC