onsemi FDMS7678

Name: onsemi FDMS7678
Brand: onsemi
SKU: FDMS7678

MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity: N Channel; Continuous Drain Curren

$ 0.416

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	FDMS7678	1,342	1	Cut Tape	1.330	0.914	0.673	0.555	0.555
Verical		FDMS7678	1,200	832					0.416	0.371
Rochester Electronics		FDMS7678	1,200					0.401	0.333	0.297	15h
DigiKey	3	FDMS7678CT-ND	1,990	1	Cut Tape	1.410	0.888	0.587	0.416	0.416
Onlinecomponents.com		FDMS7678	0	750	Bulk				0.472	0.324

Inventory History

3 month trend: -0.42%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDMS7678.

Newark

Datasheet0 pages0 years ago

Upverter

IHS

onsemi

element14 APAC

Inventory History

3 month trend:

-0.42%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFDMS7678

ROHMRS1E200GNTB

Price @ 1000

$ 0.416

$ 0.386

Stock

494,624

65,962

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

17.5 A

20 A

Threshold Voltage

1.5 V

Rds On Max

5.5 mΩ

4.6 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.3 W

Input Capacitance

2.41 nF

1.08 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2012-04-28

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDMS7678 provided by its distributors.

MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curren

Newark

N-Channel Power Trench® MOSFET 30V, 26A, 5.5mΩ

onsemi

Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

IHS

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Fairchild Semiconductor

MOSFET, N-CH, 30V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

Farnell