onsemi FDI030N06
$ 2.438
EOL
Inventory History
3 month trend: -20.89%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-08-11
Lifecycle StatusEOL (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
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Descriptions
Descriptions of onsemi FDI030N06 provided by its distributors.
PowerTrench® MOSFET, N-Channel, 60V, 193A, 3.2mΩ
Trans MOSFET N-CH Si 60V 193A 3-Pin(3+Tab) I2PAK Tube
FET 60V 3.2 MOHM TO220 ROHS COMPLIANT: YES
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
231W(Tc) 20V 4.5V@ 250¦ÌA 151nC@ 10V 1N 60V 3.2m¦¸@ 75A,10V 120A 9.815nF@25V I2PAK,TO-262 10.29mm*4.83mm*7.88mm
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -20.89%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.387 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.815 nF
Max Operating Temperature175 °C
Max Power Dissipation231 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation231 W
Rds On Max3.2 mΩ
Rise Time178 ns
Turn-Off Delay Time54 ns
Turn-On Delay Time39 ns
Dimensions
Height4.83 mm
Length10.29 mm
Width9.65 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements