Infineon IRFSL7730PBF

Name: Infineon IRFSL7730PBF
Brand: Infineon
SKU: IRFSL7730PBF

Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - TO-262-3

$ 2.145

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRFSL7730PBF	899					1.600	1.430	1.340	11h
RS (Formerly Allied Electronics)		IRFSL7730PBF	0	800	Bulk				2.860	2.860	2h
Microchip USA		IRFSL7730PBF	130	150	Bulk				11.375	11.375	3d
Worldway Electronics		IRFSL7730PBF	12,345	7	Tube		0.419	0.406	0.384	0.384	1d
Esaler Electronic		IRFSL7730PBF	143			2.100	2.079	2.059	2.039	2.019	1d

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IHS

Datasheet13 pages11 years ago

Newark

Future Electronics

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Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-01-18

Lifecycle StatusProduction (Last Updated: 3 months ago)

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Descriptions

Descriptions of Infineon IRFSL7730PBF provided by its distributors.

Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - TO-262-3

Future Electronics

Power Field-Effect Transistor, 195A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

Infineon

Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:246A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes

Newark