onsemi FDI040N06
Trans MOSFET N-CH 60V 168A 3-Pin(3+Tab) I2PAK Rail
$ 1.62
Obsolete
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-08-12
Lifecycle StatusObsolete (Last Updated: 7 months ago)
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Descriptions
Descriptions of onsemi FDI040N06 provided by its distributors.
Trans MOSFET N-CH 60V 168A 3-Pin(3+Tab) I2PAK Rail
Power Field-Effect Transistor, 120A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
231W(Tc) 4.5V@ 250µA 133nC@ 10V 1individualNChannel 60V 4mΩ@ 75A,10V 8.235pF@25V I2PAK，TO-262 Through hole mounting
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.235 nF
Max Operating Temperature175 °C
Max Power Dissipation231 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation231 W
Rds On Max4 mΩ
Rise Time40 ns
Turn-Off Delay Time55 ns