STMicroelectronics STI260N6F6
$ 2.45
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
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Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STI260N6F6.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-07
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
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onsemi2SK4066-1E
Tube Through Hole N-Channel Single Mosfet Transistor 100A Ta 100A 1.65W 750ns
Descriptions
Descriptions of STMicroelectronics STI260N6F6 provided by its distributors.
N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
STI260N6F6 N-channel MOSFET Transistor, 120 A, 60 V, 3-Pin I2PAK
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) I2PAK Tube
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
FIXED IND 900NH 4.6A 16.9 MOHM
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time62.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.4 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max3 mΩ
Resistance3 MΩ
Rise Time165 ns
Schedule B8541290080
Turn-Off Delay Time144.4 ns
Turn-On Delay Time31.4 ns
Dimensions
Height10.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STI260N6F6.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant