onsemi FDC654P
$ 0.164
Production
Inventory History
3 month trend: +0.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
Download onsemi FDC654P symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 EE Concierge | SymbolFootprint |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.164
$ 0.154
Stock
10,825,929
7,672
Authorized Distributors
6
1
Mount
Surface Mount
-
Case/Package
SOT-23-6
-
Drain to Source Voltage (Vdss)
-30 V
30 V
Continuous Drain Current (ID)
3.6 A
3.6 A
Threshold Voltage
-1.9 V
-
Rds On Max
75 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
800 mW
1.6 W
Input Capacitance
298 pF
-
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
Diodes Inc.DMP3105LVT-7
Power MOSFET, P Channel, 30 V, 3.1 A, 0.065 ohm, TSOT-26, Surface Mount
InfineonIRLMS1503TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.1Ohm;ID 3.2A;Micro6 (SOT-23);PD 1.7W;-55de
Diodes Inc.ZXMN3A01E6TA
N-Channel 30 V 0.12 Ohm Surface Mount Enhancement Mode MOSFET - SOT-23-6
Descriptions
Descriptions of onsemi FDC654P provided by its distributors.
P-Channel PowerTrench® MOSFET, Logic Level, -30V, -3.6A, 75mΩ
P-Channel 30 V 75 mOhm Surface Mount Logic Level PowerTrench Mosfet SSOT-6
SINGLE P-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications.
MOSFET, P-CH, -30V, -3.6A, SOT-23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.063ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.32%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)3.6 A
Current Rating-3.6 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance298 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation800 mW
Rds On Max75 mΩ
Resistance75 MΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage-1.9 V
Turn-Off Delay Time11 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements