onsemi FDC658P

Name: onsemi FDC658P
Brand: onsemi
SKU: FDC658P

ON SEMICONDUCTOR - FDC658P - MOSFET Transistor, P Channel, 4 A, 30 V, 0.041 ohm, 10 V, 1.7 V

$ 0.364

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Distributor		SKU		Min	Pkg
Avnet		FDC658P	51,000	3K						0.291	4d
Newark	2	FDC658P	15,000	5	Cut Tape		0.927	0.611	0.611	0.611
Verical	2	FDC658P	1,310	21				0.336	0.288	0.288
Arrow Electronics	2	FDC658P	1,310	1		0.420	0.379	0.336	0.288	0.288
Rochester Electronics		FDC658P	3,000					0.358	0.297	0.265	11h

Inventory History

3 month trend: +88.54%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDC658P.

IHS

Datasheet6 pages3 years ago

Datasheet5 pages0 years ago

Upverter

element14 APAC

onsemi

Farnell

Inventory History

3 month trend:

+88.54%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-02-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDC658P provided by its distributors.

ON SEMICONDUCTOR - FDC658P - MOSFET Transistor, P Channel, 4 A, 30 V, 0.041 ohm, 10 V, 1.7 V

Fly-Wing Technology

P-Channel PowerTrench® MOSFET, Logic Level, -30V, -4A, 50mΩ

onsemi

MOSFET P-CH 30V 4A SSOT-6 / Trans MOSFET P-CH 30V 4A 6-Pin TSOT-23 T/R

Win Source

P-Channel 30 V 50 mOhm Surface Mount Logic Level PowerTrench Mosfet SSOT-6

Future Electronics

MOSFET, P, SUPERSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDC658P; Termination Type:SMD; Uni / Bi Directional Polarity:P; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-3V

element14 APAC

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Fairchild Semiconductor