onsemi FCD9N60NTM
EOL
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
Download onsemi FCD9N60NTM symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | Download | |
 SnapEDA | Footprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.185
Stock
178,864
310,311
Authorized Distributors
0
6
Mount
Surface Mount
-
Case/Package
DPAK
TO-252
Drain to Source Voltage (Vdss)
600 V
650 V
Continuous Drain Current (ID)
9 A
10 A
Threshold Voltage
3 V
-
Rds On Max
385 mΩ
-
Gate to Source Voltage (Vgs)
30 V
-
Power Dissipation
92.6 W
-
Input Capacitance
1 nF
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-02
Lifecycle StatusEOL (Last Updated: 22 hours ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 22 hours ago)
Related Parts
STMicroelectronicsSTD13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
onsemiFCD380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
STMicroelectronicsSTD13NM60ND
N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package
STMicroelectronicsSTD13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
Descriptions
Descriptions of onsemi FCD9N60NTM provided by its distributors.
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 9A DPAK
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET,N CH,600V,9A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance385 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation92.6 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation92.6 W
Rds On Max385 mΩ
Rise Time9.6 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time28.7 ns
Turn-On Delay Time12.7 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements