onsemi FCD9N60NTM

Name: onsemi FCD9N60NTM
Brand: onsemi
SKU: FCD9N60NTM

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK

EOL

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Farnell	2	FCD9N60NTM	0	1	Cut Tape	3.464*	3.397*	3.330*	3.330*	3.330*	19h
element14 APAC	2	FCD9N60NTM	0	1	Cut Tape	2.862*	2.002*	1.634*	1.400*	1.400*	8h
Win Source		WS-FCD9N60NTM	2,159	15				2.597	2.328	2.328	19h
Worldway Electronics		FCD9N60NTM	8,044	7	Tape & Reel		0.399	0.387	0.367	0.367	18h
Fmall Co., Limited		FCD9N60NTM	22,530			1.890	1.890	1.768	1.666	1.524	2d

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCD9N60NTM.

IHS

Datasheet8 pages12 years ago

Datasheet0 pages0 years ago

onsemi

Fairchild Semiconductor

element14 APAC

Farnell

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFCD9N60NTM

onsemiNTD360N65S3H

Price @ 1000

$ 1.221

Stock

154,110

253,134

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

9 A

10 A

Threshold Voltage

3 V

Rds On Max

385 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

92.6 W

Input Capacitance

1 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-02-02

Lifecycle StatusEOL (Last Updated: 4 days ago)

LTB Date2022-09-29

LTD Date2023-03-29

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

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Descriptions

Descriptions of onsemi FCD9N60NTM provided by its distributors.

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK

onsemi

Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 9A DPAK

Win Source

Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET,N CH,600V,9A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

Farnell

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor