STMicroelectronics STD13N60M2
$ 0.616
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Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD13N60M2.
CAD Models
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Related Parts
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STMicroelectronicsSTD13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
onsemiFCD380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
STMicroelectronicsSTD11NM60ND
N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package
Descriptions
Descriptions of STMicroelectronics STD13N60M2 provided by its distributors.
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
STD13N60M2 N-channel MOSFET Transistor, 11 A, 650 V, 3-Pin DPAK
MOSFET N-CH 600V 11A DPAK / Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
110W(Tc) 25V 4V@ 250¦ÌA 17nC@ 10 V 1individualNChannel 600V 380m¦¸@ 5.5A,10V 11A 580pF@100V DPAK£¬TO-252£¬TO-252-3 SMD mount 2.4mm(height)
MOSFET, N-CH, 600V, 11A, 110W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9.5 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance580 pF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max380 mΩ
Resistance380 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time41 ns
Turn-On Delay Time11 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD13N60M2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant