NXP Semiconductors PMT200EN,135
Obsolete
Datasheets & Documents
Download datasheets and manufacturer documentation for NXP Semiconductors PMT200EN,135.
Related Parts
NXP SemiconductorsPMT760EN,135
Small Signal Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsPMT760EN,115
Small Signal Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIPN60R3K4CEATMA1
Power MOSFET, N Channel, 600 V, 2.6 A, 3.06 ohm, SOT-223, Surface Mount
Descriptions
Descriptions of NXP Semiconductors PMT200EN,135 provided by its distributors.
Power Field-Effect Transistor, 1.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 1.8A Ta 1.8A 800mW Ta 8.3W Tc 100V
Trans MOSFET N-CH 100V 1.8A 4-Pin(3+Tab) SC-73 T/R
PMT200EN - SMALL SIGNAL, SC-73
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Technical Specifications
Physical
Case/PackageTO-261-4
MountSurface Mount
Technical
Continuous Drain Current (ID)1.8 A
Drain to Source Voltage (Vdss)100 V
Input Capacitance475 pF
Max Operating Temperature150 °C
Max Power Dissipation8.3 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max235 mΩ
Datasheets & Documents
Download datasheets and manufacturer documentation for NXP Semiconductors PMT200EN,135.