NXP Semiconductors MRF6S20010NR1
$ 22.515
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRF6S20010NR1.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2005-12-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
Related Parts
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Descriptions
Descriptions of NXP Semiconductors MRF6S20010NR1 provided by its distributors.
RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1732
GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, ,
NXP Semiconductors SCT
Transistor RF FET N-CH 68V 1600MHz to 2200MHz 3-Pin TO-270 T/R
500mV,12V 1N 68V 0.12pF@ 28V TO-270-2 9.7mm*6.15mm*2.08mm
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA
S BAND Si N-CHANNEL RF POWER MOSFET TO-270AA
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-270
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight529.540742 mg
Technical
Drain to Source Breakdown Voltage68 V
Drain to Source Voltage (Vdss)68 V
Element ConfigurationSingle
Frequency2.17 GHz
Gain14 dB
Gate to Source Voltage (Vgs)12 V
Max Frequency2.2 GHz
Max Operating Temperature225 °C
Max Output Power1 W
Min Breakdown Voltage68 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power10 W
PackagingTape and Reel
Test Current130 mA
Test Voltage28 V
Voltage Rating68 V
Voltage Rating (DC)28 V
Datasheets & Documents
Download datasheets and manufacturer documentation for NXP Semiconductors MRF6S20010NR1.
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements