NXP Semiconductors MRFE6S9060NR1

Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
$ 58.684
EOL

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for NXP Semiconductors MRFE6S9060NR1.

IHS

Datasheet15 pages18 years ago

element14 APAC

Freescale Semiconductor

Inventory History

3 month trend:
-5.58%

CAD Models

Download NXP Semiconductors MRFE6S9060NR1 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
SnapEDA
SymbolFootprint
Download
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2007-10-02
Lifecycle StatusEOL (Last Updated: 4 weeks ago)
LTB Date2026-09-30
LTD Date2027-09-30

Related Parts

NXP SemiconductorsMRFE6S9045NR1
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V
NXP SemiconductorsMW6S010NR1
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732
NXP SemiconductorsMRF6S27015NR1
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V
NXP SemiconductorsMRF6S20010GNR1
RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731
NXP SemiconductorsMRF6S20010NR1
RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1732
NXP SemiconductorsMRF6V2010NR1
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

Descriptions

Descriptions of NXP Semiconductors MRFE6S9060NR1 provided by its distributors.

Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA
TRANSISTOR, RF, 66V, TO-270-2; Drain Source Voltage Vds: 66VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 470MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270; No. of Pins
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:21.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes

Manufacturer Aliases

NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:

  • NXP
  • PHILIPS
  • PHIL
  • NXP USA Inc
  • PHI
  • PHILLIPS
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • NXP/PHILIPS
  • PHILIPS SEMICONDUCTOR
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • NXP / Freescale
  • PHILL
  • PHILIPS ECG
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP

Part Number Aliases

This part may be known by these alternate part numbers:

  • MRFE6S9060NR1.