Infineon SPD04N80C3ATMA1

Name: Infineon SPD04N80C3ATMA1
Brand: Infineon
SKU: SPD04N80C3ATMA1

Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R / Cool MOS™ Power Transistor

$ 0.703

NRND

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Distributor		SKU		Min	Pkg
Newark	2	SPD04N80C3ATMA1	5,982	5	Cut Tape		1.410	0.976	0.976	0.976
Rochester Electronics		SPD04N80C3ATMA1	3,250					0.776	0.644	0.574	1d
Arrow Electronics	3	SPD04N80C3ATMA1	5,145	1		1.880	1.277	0.765	0.652	0.616
DigiKey	3	SPD04N80C3ATMA1CT-ND	6,624	1	Cut Tape	2.660	1.700	1.152	0.842	0.842
Future Electronics	2	SPD04N80C3ATMA1	0	2500	Tape & Reel					0.580

Inventory History

3 month trend: -43.97%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPD04N80C3ATMA1.

ODG (Origin Data Global)

Datasheet10 pages13 years ago

IHS

Newark

Farnell

Inventory History

3 month trend:

-43.97%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-02

Lifecycle StatusNRND (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon SPD04N80C3ATMA1 provided by its distributors.

Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R / Cool MOS™ Power Transistor

Win Source

CoolMOS Power Transistor Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4A; Package / Case:TO-252; Power Dissipation Pd:63W; Pulse Current Idm:12A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar

Infineon