Infineon SPB80N06S08ATMA1

Name: Infineon SPB80N06S08ATMA1
Brand: Infineon
SKU: SPB80N06S08ATMA1

55V, N-Ch, 8 mΩ max, Automotive MOSFET, D2PAK, SIPMOS™, PG-TO263-3, RoHS

$ 2

Obsolete

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Distributor		SKU		Min	Pkg
Rochester Electronics		SPB80N06S08ATMA1	24,523					2.230	2.000	1.880	19h
Verical	3	SPB80N06S08ATMA1	523	135					2.500	2.350
Win Source	2	WS-675115	7,000	21				2.245	1.883	1.883	20h
Worldway Electronics		SPB80N06S08ATMA1	10,423	7	Tape & Reel		0.695	0.674	0.638	0.638	19h
Aztech		SPB80N06S08ATMA1	12,068			6.060	6.060	6.060	6.060	6.060	16h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

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IHS

Datasheet8 pages20 years ago

iiiC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-11-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-03-31

LTD Date2023-09-30

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Descriptions

Descriptions of Infineon SPB80N06S08ATMA1 provided by its distributors.

55V, N-Ch, 8 mΩ max, Automotive MOSFET, D2PAK, SIPMOS™, PG-TO263-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Summary of Features: N-channel - Normal Level -Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Avalanche test; Repetive Avalanche up to Tjmax = 175 VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 W; dv /dt rated | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon