Infineon IRLZ44NSPBF

Name: Infineon IRLZ44NSPBF
Brand: Infineon
SKU: IRLZ44NSPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.022 Ohm; Id 47A; D2PAK; Pd 110W; Vgs +/-16V; -55

$ 2.24

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLZ44NSPBF	0	700	Bulk				2.240	1.310	22h
Farnell	IRLZ44NSPBF	0	1		1.744*	1.376*	0.995*	0.693*	0.680*	1d
Win Source	WS-IRLZ44NSPBF	9,210	75				0.674	0.522	0.522	6h
Worldway Electronics	IRLZ44NSPBF	12,315	7	Tube		0.167	0.162	0.154	0.154	5h
Chipsmall Limited	IRLZ44NSPBF	380,000	1		1.500	1.000	0.600	0.500	0.500	8h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLZ44NSPBF.

Newark

Datasheet11 pages22 years ago

Datasheet10 pages28 years ago

IHS

element14 APAC

RS (Formerly Allied Electronics)

Jameco

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-11-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRLZ44NSPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 47A;D2Pak;PD 110W;VGS +/-16V;-55

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - D2PAK

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55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

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MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 110 W

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Trans MOSFET N-CH 55V 47A 3-Pin(2+Tab) D2PAK

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FIFTH GENERATION HEXFET POWER MOSFET Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 55V, 47A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:110W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:47A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:D2-PAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:160A; SMD Marking:LZ44NS; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

element14 APAC