Infineon IRLU024NPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;I-Pak (TO-251AA);PD 45W

Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-251AA, Through Hole

Infineon Technologies N channel HEXFET power MOSFET, 55 V, 17 A, I-PAK, IRLU024NPBF

55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

HEXFET Power MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

MOSFET, N, 55V, 17A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:46W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:65mohm; Package / Case:IPAK; Power Dissipation Pd:46W; Power Dissipation Pd:46W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.