Infineon IRLML2502TRPBF
$ 0.147
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
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Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -48.05%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.147
$ 0.157
Stock
13,349,740
274,783
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
4.2 A
4.2 A
Threshold Voltage
1.2 V
1.2 V
Rds On Max
45 mΩ
-
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
1.25 W
1.25 W
Input Capacitance
740 pF
740 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 6 months ago)
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Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23
InfineonIRLML6402GTRPBF
Single P-Channel 20 V 1.3 W 8.0 nC Hexfet Power Mosfet Surface Mount - SOT-23
Descriptions
Descriptions of Infineon IRLML2502TRPBF provided by its distributors.
Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
MOSFET N-CH 20V 4.2A SOT23 N-Channel 20 V 4.2A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.035Ohm;ID 4.2A;Micro3;PD 1.25W;VGS +/-12V
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 20V 4.2A 3-Pin SOT-23 T/R / HEXFET Power MOSFET
Infineon N-Channel MOSFET IRLML2502, Vds=20V 4.2A SOT-23 SMD 3-Pin
HEXFET Power MOSFET Small Signal Field-Effect Transistor
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.2V; Power Dissipation:1.25W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRLML2502TRPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.045ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.2V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:33A; Current, Idss Max:1.0µA; External Depth:2.5mm; External Length / Height:1.12mm; N-channel Gate Charge:12nC; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; SMD Marking:1G; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:26s; Time, Rise:10ns; Time, trr Typ:16ns; Transistors, No. of:1; Typ Capacitance Ciss:740pF; Typ Charge Qrr @ Tj = 25°C:8.6nC; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.2V; Voltage, Vgs th Min:0.6V; Width, External:3.05mm; Width, Tape:8mm
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -48.05%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.2 A
Current Rating4.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance740 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Manufacturer Package IdentifierMicro3™
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Elements1
On-State Resistance45 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max45 mΩ
Resistance45 mΩ
Rise Time10 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.2 V
Turn-Off Delay Time54 ns
Turn-On Delay Time7.5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.016 mm
Length2.794 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements