onsemi FDN339AN

Name: onsemi FDN339AN
Brand: onsemi
SKU: FDN339AN

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3A, 35mΩ

$ 0.17

Production

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Avnet	3	FDN339AN	6,000	3K						0.130	2d
Future Electronics	2	FDN339AN	12,000	3K	Tape & Reel					0.178
Newark	3	FDN339AN	12,999	1	Cut Tape	0.773	0.773	0.310	0.211	0.211
Verical	2	FDN339AN	103	46				0.130	0.130	0.130
Arrow Electronics		FDN339AN	103	1		0.257	0.215	0.130	0.130	0.130

Inventory History

3 month trend: +24.12%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDN339AN.

IHS

Datasheet6 pages3 years ago

Datasheet5 pages17 years ago

Upverter

Farnell

onsemi

Newark

Inventory History

3 month trend:

+24.12%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-12-08

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDN339AN provided by its distributors.

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3A, 35mΩ

onsemi

Single N-Channel 20 V 0.061 Ohm 0.5 W PowerTrenChannel SMT Mosfet - SSOT-3

Future Electronics

N-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N, SMD, SUPERSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Fairchild Semiconductor

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 8 / Fall Time ns = 5 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

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