Infineon IRLML6402TRPBF

Name: Infineon IRLML6402TRPBF
Brand: Infineon
SKU: IRLML6402TRPBF

Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23

$ 0.116

EOL

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Avnet	2	IRLML6402TRPBF	501,000	3K						0.063	2d
Future Electronics	2	IRLML6402TRPBF	1,152,000	3K	Tape & Reel					0.065
Arrow Electronics		IRLML6402TRPBF	19,356	1		0.419	0.243	0.150	0.101	0.078
Newark	2	IRLML6402TRPBF	0	1	Cut Tape	0.453	0.274	0.173	0.151	0.151
Farnell	5	IRLML6402TRPBF.	0	1	Cut Tape	0.479*	0.479*	0.205*	0.149*	0.149*	4h

Inventory History

3 month trend: +11.34%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLML6402TRPBF.

Newark

Datasheet10 pages12 years ago

IHS

Upverter

element14 APAC

iiiC

Inventory History

3 month trend:

+11.34%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-09-23

Lifecycle StatusEOL (Last Updated: 4 months ago)

LTB Date2026-06-30

LTD Date2027-12-31

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Descriptions

Descriptions of Infineon IRLML6402TRPBF provided by its distributors.

Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23

Maritex

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.065Ohm;ID -3.7A;Micro3;PD 1.3W;VGS +/-12V

RS (Formerly Allied Electronics)

Infineon Technologies P-channel HEXFET power MOSFET, 20 V, 3.7 A, SOT-23, IRLML6402TRPBF

Burklin Elektronik

-20V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

Power MOSFET, P Channel, 20 V, 3.7 A, 0.065 ohm, SOT-23, Surface Mount

Avnet

P CHANNEL MOSFET, -20V, 3.7A SOT-23; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A;

element14 APAC

HEXFET Power MOSFET Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

ComSIT Distribution GmbH

Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.7A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:Micro3 ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon