Infineon IRLL2703TRPBF
Obsolete
Price and Stock
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Inventory History
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CAD Models
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Alternate Parts
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CAD Models
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Related Parts
InfineonIRLL3303PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.031Ohm;ID 4.6A;SOT-223;PD 1W;VGS +/-16V
InfineonIRLL3303TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.031Ohm;ID 4.6A;SOT-223;PD 1W;VGS +/-16V
Descriptions
Descriptions of Infineon IRLL2703TRPBF provided by its distributors.
Single N-Channel 30 V 0.06 Ohm 9.3 nC HEXFET® Power Mosfet - SOT-223
MOSFET, 30V, 5.5A, 45 MOHM, 9.3 NC QG, LOGIC LEVEL, SOT-223
Trans MOSFET N-CH Si 30V 5.5A 4-Pin(3+Tab) SOT-223 T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 5.5A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.9A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)3.9 A
Current Rating3.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time14 ns
Forward Voltage1 V
Gate to Source Voltage (Vgs)16 V
Input Capacitance530 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance45 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation2.1 W
Rds On Max45 mΩ
Resistance60 mΩ
Rise Time24 ns
Schedule B8541290080
Turn-Off Delay Time6.9 ns
Turn-On Delay Time7.4 ns
Voltage Rating (DC)30 V
Dimensions
Height1.4478 mm
Length6.6802 mm
Width3.7 mm
Compliance
Environmental Classification
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements