Infineon IRLL3303PBF

Name: Infineon IRLL3303PBF
Brand: Infineon
SKU: IRLL3303PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.031 Ohm; Id 4.6A; SOT-223; Pd 1W; Vgs +/-16V

$ 0.92

Obsolete

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRLL3303PBF	0	1	Bulk	1.030	0.920	0.920	0.920	0.920	1d
Farnell	2	IRLL3303PBF	0	1	Cut Tape	0.891*	0.703*	0.549*	0.428*	0.420*	7h
Win Source		WS-IRLL3303PBF	2,160	20				2.052	1.721	1.721	9h
Worldway Electronics		IRLL3303PBF	14,579	7	Tube		0.425	0.412	0.391	0.391	7h
Aztech		IRLL3303PBF	855			18.260	18.260	18.260	18.260	18.260	5h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLL3303PBF.

IHS

Datasheet10 pages22 years ago

Datasheet9 pages22 years ago

TME

element14 APAC

RS (Formerly Allied Electronics)

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-04-27

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRLL3303PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.031Ohm;ID 4.6A;SOT-223;PD 1W;VGS +/-16V

RS (Formerly Allied Electronics)

Single N-Channel 30 V 31 mOhm 34 nC HEXFET® Power Mosfet - SOT-223

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Infineon SCT

Trans MOSFET, N-CH 30V, 4.6A, 31mOHM, 4-Pin(3+Tab) SOT-223 Pb free

Avnet

MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W

Distrelec

HEXFET POWER MOSFET Small Signal Field-Effect Transistor

ComSIT Distribution GmbH

Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 30V, 4.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.6A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:60°C/W; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.1W; Power Dissipation Pd:2.1W; Pulse Current Idm:37A; SMD Marking:LL3303; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

element14 APAC