Infineon IRGB4062DPBF

Name: Infineon IRGB4062DPBF
Brand: Infineon
SKU: IRGB4062DPBF

Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 48A 250W TO220AB

$ 10.01

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRGB4062DPBF	0	1	Bulk	11.120	10.010	10.010	10.010	10.010	14h
Win Source	WS-IRGB4062DPBF	4,352	2			21.260	18.425	18.425	18.425	2h
Worldway Electronics	IRGB4062DPBF	18,547	7	Tube		10.611	10.410	10.010	9.810	1h
Aztech	IRGB4062DPBF	471			18.560	18.560	18.560	18.560	18.560	20h
AAA CHIPS	IRGB4062DPBF	3,877			14.096	11.566	11.204	10.482	10.482	1d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRGB4062DPBF.

Newark

Datasheet13 pages12 years ago

Datasheet12 pages17 years ago

IHS

iiiC

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-02-24

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2022-01-15

LTD Date2022-07-15

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Descriptions

Descriptions of Infineon IRGB4062DPBF provided by its distributors.

Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 48A 250W TO220AB

Win Source

600 V, 24 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS

Infineon SCT

Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding

Infineon

IRGB4062DPbF Series 600 V 24 A N-Channel Bipolar Transistor IGBT - TO-220AB

Future Electronics

600V UltraFast Copack Trench IGBT in a TO-220AB package

International Rectifier

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W

Distrelec

Dc Collector Current:48A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Msl:- Rohs Compliant: Yes |Infineon IRGB4062DPBF.

Newark

IGBT, COPAK, TO-220; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:48A; Package / Case:TO-220; Power Dissipation Max:250W; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulsed Current Icm:96A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC