Infineon IRG4BC30W-SPBF

Name: Infineon IRG4BC30W-SPBF
Brand: Infineon
SKU: IRG4BC30W-SPBF

Trans IGBT Chip N-CH 600V 23A 3-Pin(2+Tab) D2PAK Tube

$ 5.85

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC30W-SPBF	0	300	Bulk				5.850	5.850	20h
Farnell		IRG4BC30W-SPBF	0	1		1.800*	1.800*	1.582*	1.513*	1.513*	3h
Microchip USA		IRG4BC30W-S	226	600	Tray				2.628	2.628	21h
Component Stockers USA		IRG4BC30W-SPBF	764			99.990	99.990	99.990	99.990	99.990	3d
Worldway Electronics	2	IRG4BC30W-S	12,169	7	Tube		0.700	0.678	0.642	0.642	1d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4BC30W-SPBF.

IHS

Datasheet9 pages16 years ago

Newark

DigiKey

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-07-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRG4BC30W-SPBF provided by its distributors.

Trans IGBT Chip N-CH 600V 23A 3-Pin(2+Tab) D2PAK Tube

Verical

600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Target Applications: Air Conditioner; Dishwasher; PFC; Washing Machine

Infineon

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel

IHS

Igbt Discretes Rohs Compliant: Yes

Newark

IGBT, D2-PAK; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:D2-PAK; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:23A; Package / Case:D2-PAK; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:92A; Rise Time:17ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC