Infineon IRG4BC30KDPBF

Name: Infineon IRG4BC30KDPBF
Brand: Infineon
SKU: IRG4BC30KDPBF

Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-220AB Tube, TO220COPAK-3, RoHS

$ 6.46

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC30KDPBF	0	1	Bulk	7.340	6.460	6.460	6.460	6.460	23h
Farnell	2	IRG4BC30KDPBF	0	1		4.260*	3.239*	2.809*	2.016*	2.016*	8h
Win Source		WS-IRG4BC30KDPBF	3,000	6			8.667	5.778	5.778	5.778	10h
Worldway Electronics	2	IRG4BC30KD	12,613	7			0.946	0.917	0.869	0.869	1d
Aztech		IRG4BC30KDPBF	628			17.410	17.410	17.410	17.410	17.410	2d

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4BC30KDPBF.

IHS

Datasheet10 pages16 years ago

Datasheet11 pages25 years ago

Newark

iiiC

RS (Formerly Allied Electronics)

DigiKey

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-01-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-11-04

LTD Date2013-05-04

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Descriptions

Descriptions of Infineon IRG4BC30KDPBF provided by its distributors.

Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-220AB Tube, TO220COPAK-3, RoHS

Infineon SCT

IGBT Transistors; INFINEON; IRG4BC30KDPBF; 600 V; Single; 28 A; TO-220AB

Maritex

IRG4BC30 Series 600 V 16 A N-Channel Ultra Fast IGBT - TO-220AB

Future Electronics

600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package

International Rectifier

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.7 V Current release time: 160 ns Power dissipation: 100 W

Distrelec

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, TO-220; DC Collector Current: 28A; Collector Emitter Saturation Voltage Vce(on): 2.21V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating T

Farnell

IGBT, 600V, 28A, TO-220; Transistor Type:IGBT; DC Collector Current:28A; Collector Emitter Voltage Vces:2.21V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:28A; Current Temperature:25°C; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:58A; Rise Time:42ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC