Infineon IRG4BC30FDPBF

Name: Infineon IRG4BC30FDPBF
Brand: Infineon
SKU: IRG4BC30FDPBF

IRG4BC30FD Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-220AB

$ 6.31

Obsolete

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRG4BC30FDPBF	0	1	Bulk	7.010	6.310	6.310	6.310	6.310	4h
Farnell		IRG4BC30FDPBF	0	1		4.531*	3.411*	3.411*	3.411*	3.411*	2h
Win Source		WS-IRG4BC30FDPBF	5,100	18				2.239	1.940	1.940	16h
Worldway Electronics	2	IRG4BC30FDPBF	18,033	7	Tube		2.059	1.996	1.891	1.891	1d
IC Components Ltd.		IRG4BC30FDPBF	87,066			6.390	6.390	6.390	6.390	6.390	5d

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4BC30FDPBF.

IHS

Datasheet10 pages16 years ago

Factory Futures

Newark

DigiKey

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-04-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-08-11

LTD Date2013-02-11

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Descriptions

Descriptions of Infineon IRG4BC30FDPBF provided by its distributors.

IRG4BC30FD Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-220AB

Future Electronics

Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB

Avnet

Copacked 600V IGBT in a TO-220AB package with a fast 1-8 kHz soft recovery diode, TO220COPAK-3, RoHS

Infineon SCT

IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 160 ns Power dissipation: 100 W

Distrelec

FAST COPACK INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB

ComSIT Distribution GmbH

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:31A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Current Temperature:25°C; Device Marking:IRG4BC30FDPBF; Fall Time Max:160ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC