Infineon IRG4BC30FD1PBF

Name: Infineon IRG4BC30FD1PBF
Brand: Infineon
SKU: IRG4BC30FD1PBF

600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode

$ 1.48

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRG4BC30FD1PBF	3,686					1.650	1.480	1.390	21h
RS (Formerly Allied Electronics)		IRG4BC30FD1PBF	0	2	Bulk		7.380	6.990	6.990	6.990	10h
Farnell		IRG4BC30FD1PBF	0	1		3.236*	3.236*	2.481*	1.685*	1.685*	9h
Component Stockers USA		IRG4BC30FD1PBF	845			1.860	1.860	1.750	1.580	1.580	>1wk
Worldway Electronics	2	IRG4BC30FD1	9,897	7	Tube						2d

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4BC30FD1PBF.

IHS

Datasheet10 pages16 years ago

Newark

RS (Formerly Allied Electronics)

DigiKey

Inventory History

3 month trend:

+0.00%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-09-03

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRG4BC30FD1PBF provided by its distributors.

600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode

International Rectifier

Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB Tube

Verical

Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Fall Time Max:210ns; Package / Case:TO-220AB; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:24ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

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