Infineon IRFSL7434PBF
$ 1.22
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
Related Parts
InfineonAUIRFSL8408
Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRFSL7440PBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
Descriptions
Descriptions of Infineon IRFSL7434PBF provided by its distributors.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
Infineon SCT
MOSFET N-CH 40V 195A TO262 / N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-262
TUBE / MOSFET, 40V, 195A, 1.6 mOhm, 216 nC Qg, TO-262
Trans MOSFET N-CH 40V 320A 3-Pin(3+Tab) TO-262 Tube
MOSFET, N-CH, 40V, 195A, TO-262-3
Power Field-Effect Transistor, 195A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
IRFSL7434 12V-300V N-CHANNEL POWER MOSF;
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084002 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.6 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.82 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation294 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.6 mΩ
Package Quantity1000
Power Dissipation294 W
Rds On Max1.6 mΩ
Rise Time68 ns
Threshold Voltage3 V
Turn-Off Delay Time115 ns
Turn-On Delay Time24 ns