Infineon IRFSL7440PBF

Name: Infineon IRFSL7440PBF
Brand: Infineon
SKU: IRFSL7440PBF

40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS

$ 0.848

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
Arrow Electronics	IRFSL7440PBF	1,000	1		1.498	1.170	0.933	0.827	0.827
Rochester Electronics	IRFSL7440PBF	7,995					0.926	0.768	0.685	5h
RS (Formerly Allied Electronics)	IRFSL7440PBF	0	450	Bulk				2.620	2.310	18h
Farnell	IRFSL7440PBF	0	5			1.532*	1.070*	0.836*	0.732*	4h
Mouser	942-IRFSL7440PBF	699	1	Tube	2.620	2.540	2.540	0.869	0.790

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFSL7440PBF.

IHS

Datasheet13 pages11 years ago

Datasheet12 pages11 years ago

element14 APAC

Inventory History

3 month trend:

+0.00%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-10-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

Related Parts

InfineonIRFSL7437PBF

Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - TO-262

Details

InfineonIRF2804LPBF

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 280A;TO-262;PD 330W;VF 1.3V

Details

InfineonAUIRF1404ZL

Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS

Details

onsemiHUF75639S3

N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

Details

onsemiFDI150N10

PowerTrench® MOSFET, N-Channel, 100V, 57A, 16mΩ

Details

InfineonIRFSL4620PBF

200V Single N-Channel HEXFET Power MOSFET in a TO-262 package

Details

Descriptions

Descriptions of Infineon IRFSL7440PBF provided by its distributors.

40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS

Infineon SCT

MOSFET N CH 40V 120A TO-262 / N-Channel 40 V 120A (Tc) 208W (Tc) Through Hole TO-262

Win Source

Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - TO-262

Future Electronics

Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

MOSFET, N-CH, 40V, 120A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

Farnell

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

Infineon