Infineon IRFS4229TRLPBF

Name: Infineon IRFS4229TRLPBF
Brand: Infineon
SKU: IRFS4229TRLPBF

250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS

$ 1.659

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	43AC3281	1,543	1		5.040	3.580	2.730	2.440	2.440	5d
Newark	2	IRFS4229TRLPBF	1,543	1	Cut Tape	1.460	1.460	1.460	1.460	1.460
Future Electronics	2	IRFS4229TRLPBF	12,800	800	Tape & Reel				1.610	1.570
Arrow Electronics	2	IRFS4229TRLPBF	2,595	1		4.415	2.968	2.165	2.092	2.092
Rochester Electronics		IRFS4229TRLPBF	7,200					1.520	1.360	1.280	10h

Inventory History

3 month trend: -8.46%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS4229TRLPBF.

IHS

Datasheet10 pages17 years ago

Datasheet9 pages17 years ago

iiiC

Inventory History

3 month trend:

-8.46%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS4229TRLPBF

InfineonIRFS4229PBF

Price @ 1000

$ 1.659

$ 6.36

Stock

713,413

154,508

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

250 V

Continuous Drain Current (ID)

45 A

Threshold Voltage

5 V

Rds On Max

48 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

330 W

Input Capacitance

4.56 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-04-12

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFS4229TRLPBF provided by its distributors.

250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 250 V 48 mOhm 72 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

N CH HEXFET POWER MOSFET, PDP SWITCH, 250V, 45A, D2PAK, FULL REEL

Newark

Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) D2PAK T/R

Avnet

Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N-CH, 250V, 45A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Po

element14 APAC