Infineon IRFR4620PBF

Name: Infineon IRFR4620PBF
Brand: Infineon
SKU: IRFR4620PBF

Single N-Channel 200 V 78 mOhm 38 nC HEXFET® Power Mosfet - TO-252AA

$ 2.45

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR4620PBF	0	675	Bulk				2.450	1.450	13h
Farnell	IRFR4620PBF	0	5			1.386*	1.118*	0.751*	0.736*	1d
Win Source	WS-IRFR4620PBF	21,270	85				0.613	0.477	0.477	21m
Worldway Electronics	IRFR4620PBF	12,029	7	Tube		0.336	0.330	0.317	0.311	1d
Fly-Wing Technology	IRFR4620PBF	157,422			0.886	0.728	0.705	0.659	0.659	2d

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR4620PBF.

Newark

Datasheet11 pages16 years ago

IHS

iiiC

element14 APAC

Alternate Parts

This Part

Alternate Parts

InfineonIRFR4620PBF

InfineonIRFR4620TRLPBF

Price @ 1000

$ 2.45

$ 1.252

Stock

420,151

1,487,492

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

200 V

Continuous Drain Current (ID)

24 A

Threshold Voltage

5 V

Rds On Max

78 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

144 W

Input Capacitance

1.71 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-12-18

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFR4620PBF provided by its distributors.

Single N-Channel 200 V 78 mOhm 38 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N-CH 200V 24A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:200V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Package / Case:D-PAK; Power Dissipation Pd:144W; Power Dissipation Pd:144W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon