Infineon IRFIZ24NPBF
$ 1.443
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -42.88%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
Download Infineon IRFIZ24NPBF symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 EE Concierge | SymbolFootprint | ||
 SnapEDA | Footprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-08-25
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
Related Parts
InfineonIRFIZ24EPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
InfineonIRLIB9343PBF
MOSFET, P-CHANNEL, -55V, -14A, 105 mOhm, 31 nC Qg, Logic Level, TO-220 FULLPACK
Descriptions
Descriptions of Infineon IRFIZ24NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 14A;TO-220 Full-Pak;PD 29W;-55deg
Single N-Channel 55 V 70 mOhm 13.3 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 14A 3-Pin(3+Tab) TO-220 Full-Pak
HEXFET POWER MOSFET Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet,n-Ch,55V,14A,175Deg C,29W,transistor Polarity-N Channel,continuous Drain Current Id-14A,drain Source Voltage Vds-55V,on Resistance Rdson-0.07Ohm,rdson Test Voltage Vgs-10V,threshold Voltage Vgs-4V,power Rohs Compliant: Yes |Infineon Technologies IRFIZ24NPBF
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -42.88%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vds)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation29 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance70 mΩ
Package Quantity2000
PackagingBulk
Power Dissipation26 W
Rds On Max70 mΩ
Recovery Time83 ns
Resistance70 MΩ
Rise Time34 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Voltage Rating (DC)55 V
Dimensions
Height19.8 mm
Length10.6172 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements