Infineon IRFB59N10DPBF
Obsolete
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRFB59N10DPBF.
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-04-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
Related Parts
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg
InfineonIRFB4710PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 75A;TO-220AB;PD 200W;VGS +/-20V
Descriptions
Descriptions of Infineon IRFB59N10DPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS +/-30V
Single N-Channel 100 V 25 mOhm 114 nC HEXFET® Power Mosfet - TO-220-3
IRFB59N10DPBF,MOSFET, 100V, 59 A, 25 MOHM, 76 NC QG, TO-220A
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)59 A
Current Rating59 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Fall Time12 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.45 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Channels1
Number of Elements1
On-State Resistance25 mΩ
Package Quantity1000
Power Dissipation3.8 W
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time90 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)100 V
Dimensions
Height19.8 mm
Width4.69 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRFB59N10DPBF.
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements