onsemi FDP75N08A

Name: onsemi FDP75N08A
Brand: onsemi
SKU: FDP75N08A

N-Channel Power MOSFET, UniFETTM, 75 V, 75 A, 11 mΩ, TO-220

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min
Farnell		FDP75N08A	0	1	0.889*	0.889*	0.858*	0.827*	0.780*	18h
element14 APAC		FDP75N08A	0	1	2.994*	2.095*	1.704*	1.462*	1.462*	1d
Component Stockers USA		FDP75N08A	2,195		1.310	1.310	1.240	1.120	1.120	>1wk
Win Source		WS-FDP75N08A	285	45			1.287	0.858	0.858	19h
Classic Components	2	FDP75N08A	20,616							3d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDP75N08A.

IHS

Datasheet8 pages12 years ago

Newark

element14 APAC

onsemi

Farnell

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-05-31

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FDP75N08A provided by its distributors.

N-Channel Power MOSFET, UniFETTM, 75 V, 75 A, 11 mΩ, TO-220

onsemi

Trans MOSFET N-CH 75V 75A 3-Pin(3+Tab) TO-220AB Rail

Avnet

N-Channel 75 V 11 mOhm Flange Mount Mosfet - TO-220

Future Electronics

Power Field-Effect Transistor, 75A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):0.011ohm; Rds(on) Test Voltage, Vgs:4V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

Newark

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:75V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:137W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:3437pF; Current Id Max:75A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.91°C/W; On State Resistance Max:11mohm; On State Resistance Typ:9.4mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:137W; Power Dissipation Pd:137W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC