Infineon IRFB3207PBF

Name: Infineon IRFB3207PBF
Brand: Infineon
SKU: IRFB3207PBF

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 3.6MILLIOHMS; Id 180A; TO-220AB; Pd 330W; -55DE

$ 1.31

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		IRFB3207PBF	236	1		3.360	2.280	1.720	1.490	1.490
Future Electronics	2	IRFB3207PBF	5,104	20	Tube			1.340	1.310	1.270
Arrow Electronics	2	IRFB3207PBF	1,929	1		2.953	2.108	1.622	1.238	1.238
Rochester Electronics		IRFB3207PBF	900					1.240	1.110	1.040	11h
DigiKey		IRFB3207PBF-ND	1,177	1	Tube	4.000	2.616	1.831	1.389	1.234

Inventory History

3 month trend: +5.71%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB3207PBF.

Jameco

Datasheet12 pages20 years ago

IHS

RS (Formerly Allied Electronics)

iiiC

Newark

Inventory History

3 month trend:

+5.71%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFB3207PBF

InfineonAUIRFB3207

Price @ 1000

$ 1.31

$ 1.45

Stock

970,263

57,568

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

TO-220-3

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

2 V

Rds On Max

4.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

7.6 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-11-17

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRFB3207PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.6Milliohms;ID 180A;TO-220AB;PD 330W;-55de

RS (Formerly Allied Electronics)

TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,180A I(D),TO-220AB

Newark

Transistor MOSFET N-Channel 75V 170A 330W Through Hole TO-220AB

Jameco

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Trans MOSFET N-CH 75V 180A 3-Pin (3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 180A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

MOSFET, N, 75V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:720A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 170 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 3.6 / Gate-Source Voltage V = 20 / Fall Time ns = 74 / Rise Time ns = 120 / Turn-OFF Delay Time ns = 68 / Turn-ON Delay Time ns = 29 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 300

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