Infineon IRFB4019PBF

150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

MOSFET N-CH 150V 17A TO220AB N-Channel 150 V 17A (Tc) 80W (Tc) Through Hole TO-220AB

Single N-Channel 150 V 95 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3

Power MOSFET, N Channel, 150 V, 17 A, 0.095 ohm, TO-220AB, Through Hole

Trans MOSFET N-CH 150V 17A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W

Power Field-Effect Transistor, 17A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

MOSFET, N, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:150V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:80W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4019; Current Id Max:17A; N-channel Gate Charge:13nC; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80mW; Pulse Current Idm:51A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V