Descriptions of Infineon IRF9Z24NSTRLPBF provided by its distributors.
Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) | MOSFET P-CH 55V 12A D2PAK
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
P-Ch MOSFET 55V 20V 4V@250µA 175mΩ@7.2A,10V 350pF@25V D2PAK SMD 4.83mm H
Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK T/R
MOSFET, P-CHANNEL, -55V, -12A, 175 MOHM, 12.7 NC QG, D2-PAK
Mosfet, P-Ch, -55V, -12A, 175Deg C, 45W; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-55V; On Resistance Rds(On):0.175Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Rohs Compliant: Yes |Infineon Technologies IRF9Z24NSTRLPBF
MOSFET, P, 55V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-55V; Current, Id Cont:12A; Resistance, Rds On:0.175ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-262AB; Current, Idm Pulse:48A; Power, Pd:45W; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.