Infineon IRF7380TRPBF
$ 0.533
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF7380TRPBF | 8,000 | 4K | 20h | ||||||||
| Newark | IRF7380TRPBF | 4,797 | 5 | Cut Tape | ||||||||
| Future Electronics | IRF7380TRPBF | 96,000 | 4K | Tape & Reel | ||||||||
| DigiKey | IRF7380TRPBFCT-ND | 8,067 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRF7380TRPBF | 5,035 | 1 |
Inventory History
3 month trend: -9.70%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-10
Lifecycle StatusProduction (Last Updated: 5 months ago)
Related Parts
Descriptions
Descriptions of Infineon IRF7380TRPBF provided by its distributors.
Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 80V 3.6A 8-Pin SOIC T/R
Avnet Japan
HEXFET POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL N-CH , 80V, 3.6A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.061ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -9.70%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance73 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationDual
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels2
Number of Elements2
On-State Resistance73 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max73 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time41 ns
Turn-On Delay Time9 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements