onsemi FDS4559

Name: onsemi FDS4559
Brand: onsemi
SKU: FDS4559

Mosfet N/p-ch 60V 4.5A/3.5A 8-SO / Trans Mosfet N/p-ch 60V 4.5A/3.5A 8-PIN SOIC T/r

$ 0.422

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet	2	34C0166	2	1		0.527	0.527	0.527	0.527	0.527	3d
Newark	2	FDS4559	2	1	Cut Tape	1.230	1.030	0.737	0.536	0.536
Verical	3	FDS4559	5,000	2500						0.316
Arrow Electronics	2	FDS4559	10	1		1.366	0.335	0.335	0.335	0.335
Master Electronics		FDS4559	1,074	100				0.294	0.281	0.271

Inventory History

3 month trend: +32.41%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS4559.

IHS

Datasheet10 pages3 years ago

Datasheet8 pages24 years ago

Upverter

element14 APAC

onsemi

Farnell

Inventory History

3 month trend:

+32.41%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-09-27

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDS4559 provided by its distributors.

MOSFET N/P-CH 60V 4.5A/3.5A 8-SO / Trans MOSFET N/P-CH 60V 4.5A/3.5A 8-Pin SOIC T/R

Win Source

N/P-Channel 60 V 55/105 mO Complementary PowerTrench Mosfet - SOIC-8

Future Electronics

Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 4.5 A, 4.5 A, 0.055 ohm

Avnet

ON SEMICONDUCTOR - FDS4559 - DUAL N/P CHANNEL MOSFET, 60V, SOIC

Fly-Wing Technology

Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

MOSFET, DUAL, NP, SMD, SO-8; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:4.5A; Current Id Max:4.5A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):55mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Fairchild Semiconductor