Infineon IRF7380PBF

Name: Infineon IRF7380PBF
Brand: Infineon
SKU: IRF7380PBF

Single N-Channel 80 V 73 mOhm 15 nC HEXFET® Power Mosfet - SOIC-8

$ 0.309

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRF7380PBF	25					0.373	0.309	0.276	2h
RS (Formerly Allied Electronics)	IRF7380PBF	0	3800	Bulk					1.020	15h
Farnell	IRF7380PBF	0	1		1.101*	1.101*	0.564*	0.430*	0.430*	2h
Win Source	WS-IRF7380PBF	108,240	165					0.256	0.237	3h
Worldway Electronics	IRF7380PBF	16,806	7	Tube		0.084	0.081	0.077	0.077	1h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7380PBF.

IHS

Datasheet9 pages12 years ago

Datasheet8 pages12 years ago

Newark

iiiC

Jameco

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+0.00%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-08-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF7380PBF provided by its distributors.

Single N-Channel 80 V 73 mOhm 15 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Transistor MOSFET Array Dual N-CH 80V 3.6A 8-Pin SOIC Tube

Avnet

Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):73mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

Benefits: RoHS Compliant; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design; Dual N-Channel MOSFET

Infineon

DUAL N CHANNEL MOSFET, 80V, SOIC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):73mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.6A; Fall Time tf:17ns; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1S1,2G1,3S2,4G2,(5&6)D2,(8&7)D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:29A; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC