Infineon IRF7351PBF

Name: Infineon IRF7351PBF
Brand: Infineon
SKU: IRF7351PBF

Dual N-Channel 60 V 17.8 mOhm 24 nC HEXFET® Power Mosfet - SOIC-8

$ 1.14

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7351PBF	0	5	Bulk		1.270	1.140	1.140	1.140	12h
Farnell	IRF7351PBF	0	5			1.353*	1.047*	0.643*	0.629*	19h
Win Source	WS-461794	20,000	70				0.725	0.483	0.483	20h
Worldway Electronics	IRF7351PBF	9,712	7	Tube		0.186	0.181	0.171	0.171	19h
IC Components Ltd.	IRF7351PBF	798,400			4.220	4.220	4.220	4.220	4.220	2d

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7351PBF.

IHS

Datasheet0 pages0 years ago

element14 APAC

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Alternate Parts

This Part

Alternate Parts

InfineonIRF7351PBF

InfineonIRF7351TRPBF

Price @ 1000

$ 1.14

$ 0.689

Stock

1,053,044

1,403,831

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

8 A

Threshold Voltage

4 V

Rds On Max

17.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2 W

Input Capacitance

1.33 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-11-18

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF7351PBF provided by its distributors.

Dual N-Channel 60 V 17.8 mOhm 24 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

60V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

MOSFET, 60V, 8A, 17.8MOHM, 24 NC QG, DUAL SO8

RS (Formerly Allied Electronics)

N CHANNEL MOSFET, 60V, 8A, SOIC

Farnell

Trans MOSFET N-CH 60V 8A 8-Pin SO

Avnet

Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Trench_Mosfets Rohs Compliant: Yes

Newark

Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Dual N-Channel MOSFET

Infineon