Infineon IRF7351TRPBF

Name: Infineon IRF7351TRPBF
Brand: Infineon
SKU: IRF7351TRPBF

Dual N-Channel 60 V 17.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8

$ 0.605

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet		IRF7351TRPBF	8,000	4K						0.415	4d
Newark	2	IRF7351TRPBF	2,663	5	Cut Tape		1.510	1.030	0.762	0.762
Future Electronics	2	IRF7351TRPBF	4,000	4K	Tape & Reel					0.485
Arrow Electronics	3	IRF7351TRPBF	10,689	1		1.716	1.169	0.805	0.607	0.546
Rutronik		TMOSP11901	12,000	4K						0.520	19h

Inventory History

3 month trend: +0.31%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7351TRPBF.

IHS

Datasheet0 pages0 years ago

Newark

iiiC

Inventory History

3 month trend:

+0.31%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF7351TRPBF

InfineonIRF7351PBF

Price @ 1000

$ 0.605

$ 1.12

Stock

1,356,722

1,043,561

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

8 A

Threshold Voltage

4 V

Rds On Max

17.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2 W

Input Capacitance

1.33 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-11-18

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7351TRPBF provided by its distributors.

Dual N-Channel 60 V 17.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Transistor MOSFET Array Dual N-CH 60V 8A 8-Pin SOIC T/R

Avnet

Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Dual N-Channel MOSFET

Infineon

N CHANNEL MOSFET, 60V, 8A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:8A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.0178ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

Newark