Infineon IRF7478TRPBF

Name: Infineon IRF7478TRPBF
Brand: Infineon
SKU: IRF7478TRPBF

Mosfet, Power; N-ch; Vdss 60V; Rds(on) 20 Milliohms; Id 7A; SO-8; Pd 2.5W; Vgs +/-20V

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Farnell	2	IRF7478TRPBF	0	1	Cut Tape	1.098*	0.885*	0.602*	0.602*	0.602*	23h
Weyland Electronics Group Pte. Ltd.		IRF7478TRPBF	1,481	1	Tape & Reel	0.526	0.526	0.526	0.526	0.526	1h
Win Source		WS-IRF7478TRPBF	19,000	50				1.004	0.669	0.669	1d
Worldway Electronics		IRF7478TRPBF	14,791	7	Tape & Reel		0.246	0.239	0.226	0.226	23h
ICPartonline		IRF7478TRPBF	29,634			0.489	0.464	0.440	0.415	0.391	>1wk

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7478TRPBF.

IHS

Datasheet8 pages21 years ago

_legacy Avnet

RS (Formerly Allied Electronics)

iiiC

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Alternate Parts

This Part

Alternate Parts

InfineonIRF7478TRPBF

onsemiFDS5690

Price @ 1000

$ 0.456

Stock

375,419

703,829

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

7 A

Threshold Voltage

3 V

Rds On Max

26 mΩ

28 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

Input Capacitance

1.74 nF

1.107 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-09-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7478TRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 60 V 30 mOhm 31 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:7.6A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

Newark

MOSFET, N CH, 60V, 7A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell