Infineon IRF7478PBF

Name: Infineon IRF7478PBF
Brand: Infineon
SKU: IRF7478PBF

Mosfet, Power; N-ch; Vdss 60V; Rds(on) 20 Milliohms; Id 7A; SO-8; Pd 2.5W; Vgs +/-20V

$ 0.68

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7478PBF	0	5	Bulk		0.770	0.680	0.680	0.680	11h
Farnell	IRF7478PBF	0	1		0.997*	0.997*	0.620*	0.458*	0.458*	21h
Worldway Electronics	IRF7478PBF	18,785	7	Tube		0.238	0.231	0.219	0.219	22h
Win Source	WS-IRF7478PBF	18,650	50				1.004	0.669	0.669	23h
Fly-Wing Technology	IRF7478PBF	229,644			0.752	0.618	0.598	0.560	0.560	20h

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7478PBF.

IHS

Datasheet9 pages21 years ago

Datasheet8 pages21 years ago

TME

RS (Formerly Allied Electronics)

Jameco

iiiC

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-12-14

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF7478PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 20 Milliohms;ID 7A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, N, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:4.2A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:56A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Power Dissipation:2.5W; Power, Pd:2.5W; Row Pitch:6.3mm; SMD Marking:IRF7478PBF; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Width, External:4.05mm

Farnell