Infineon IRF6216PBF
Transistor MOSFET P Channel 150 Volt 2.2 Amp 8 Pin SOIC
$ 0.91
Obsolete
Price and Stock
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SKU
Min
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Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-06-06
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Related Parts
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MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.24Ohm;ID -2.2A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7815PBF
MOSFET N-CH 150V 5.1A 8SO N-Channel 150 V 5.1A (Ta) 2.5W (Ta) Surface Mount 8-SO
Descriptions
Descriptions of Infineon IRF6216PBF provided by its distributors.
Transistor MOSFET P Channel 150 Volt 2.2 Amp 8 Pin SOIC
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.24Ohm;ID -2.2A;SO-8;PD 2.5W;VGS +/-20V
Single P-Channel 150 V 240 mOhm 49 nC HEXFET® Power Mosfet - SOIC-8
MOSFET P-CH 150V 2.2A 8SO P-Channel 150 V 2.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P; Transistor Polarity: P Channel; Continuous Drain Current Id: 2.2A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.24ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 2.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance240 mΩ
Drain to Source Voltage (Vdss)-150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.28 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
On-State Resistance240 mΩ
Package Quantity3800
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max240 mΩ
Recovery Time120 ns
Resistance240 MΩ
Rise Time15 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-3 V
Turn-Off Delay Time33 ns
Turn-On Delay Time18 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements