Infineon IRF6217TRPBF
Single P-Channel 150 V 2.4 Ohm 9 nC HEXFET® Power Mosfet - SOIC-8
$ 0.387
Obsolete
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-02-13
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2008-03-13
LTD Date2008-09-13
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Descriptions
Descriptions of Infineon IRF6217TRPBF provided by its distributors.
Single P-Channel 150 V 2.4 Ohm 9 nC HEXFET® Power Mosfet - SOIC-8
2.5W(Ta) 20V 5V@ 250¦ÌA 9nC@ 10 V 1P 150V 2.4¦¸@ 420mA,10V 700mA 150pF@25V SOIC-8 1.75mm
MOSFET P-CH 150V 700MA 8SO P-Channel 150 V 700mA (Ta) 2.5W (Ta) Surface Mount 8-SO
HEXFET Power MOSFET(Reset Switch for Active Clamp Reset DC to DC converters)
Trans MOSFET P-CH 150V 0.7A 8-Pin SOIC T/R
Power Field-Effect Transistor, 0.7A I(D), 150V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
Mosfet Transistor; Channel Type:P Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:700Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:20V; Power Dissipation:2.5W Rohs Compliant: Yes |Infineon Technologies IRF6217TRPBF
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)700 mA
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance2.4 Ω
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance150 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs20 V
Number of Channels1
Number of Elements1
On-State Resistance2.4 Ω
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max2.4 Ω
Rise Time7.2 ns
Schedule B8541290080
Threshold Voltage-5 V
Turn-Off Delay Time14 ns
Turn-On Delay Time12 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements