Infineon IRF5305STRRPBF
$ 1.117
Obsolete
Price and Stock
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Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRF5305STRRPBF.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-22
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
Related Parts
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MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
STMicroelectronicsSTB45NF06T4
N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
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MOSFET N-CH 55V 30A D2PAK "N-Channel 55 V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK"
InfineonIRFZ34NSTRLPBF
MOSFET N-CH 55V 29A D2PAK "N-Channel 55 V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK"
Descriptions
Descriptions of Infineon IRF5305STRRPBF provided by its distributors.
Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) D2PAK T/R
3.8W(Ta)，110W(Tc) 20V 4V@ 250µA 63nC@ 10 V 1individualPChannel 55V 60mΩ@ 16A,10V 31A 1.2nF@25V D2PAK SMD mount 6.5mm*6.22mm*2.3mm
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-31A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2PAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-55 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance60 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max60 mΩ
Rise Time66 ns
Schedule B8541290080
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRF5305STRRPBF.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements